Abstract: This paper presents the simulation results of threshold voltage for Si-based nano channel length MosFet. Simulation results will in between of 180 to 30 nm length of Si-based n-channel MosFet according to constant theory of voltage scaling. The structure of this MosFet is lightly doped drain which reduces to electric field magnitude and effect on short channel at drain region. In this paper, we analyzed the threshold voltage of these type devices and this analysis will provide some applicable limitations inside at ICs and used for basis data at VLSI Circuit design methodology.

Keywords: VLSI, MOSFE, LDD.