Abstract: The paper aims to study different types of voltage and current sense amplifiers which are used to read SRAM memory data. Thereview discusses the working operation, advantages, and disadvantagesof various sense amplifiers. Method to decide feature size of different transistors in sense amplifiers has also been discussed. Thepaper focuses on various performance parameters which should be considered during designing of sense amplifiers.
Keywords: CMOS, SRAM,CTSA, Bit lines, Pre-charge circuit.