A Review on Graphene Transistors

Abstract: researchers are running into the physical limits of speed and scaling in silicon transistor technology, forcing them to look for next –generation devices. The problem with silicon is its poor stability at 10nm and below when it oxidises, decomposes and uncontrollably migrates. The leading candidate to replace silicon being pursued by is graphene. Graphene a single- atom- thick honeycomb lattice of carbon atoms, can transport electrons more quickly than other semiconductors, a quality called electron mobility (100 times greater than silicon), making it ideally suited to atomic-scale, high-speed operation. Also graphene electrical properties can be controlled, switching it among conducting, semiconducting and electrically insulating forms. In this paper a review is given on graphene and the recent research progress of graphene transistors, and how to sidestep the obstacles in the way of using graphene as transistor.

Keywords: Graphene ; transistor ; semiconductor ; Graphene generation