📞 +91-7667918914 | ✉️ ijarcce@gmail.com
IJARCCE Logo
International Journal of Advanced Research in Computer and Communication Engineering A monthly Peer-reviewed & Refereed journal
ISSN Online 2278-1021ISSN Print 2319-5940Since 2012
IJARCCE adheres to the suggestive parameters outlined by the University Grants Commission (UGC) for peer-reviewed journals, upholding high standards of research quality, ethical publishing, and academic excellence.
← Back to VOLUME 2, ISSUE 4, APRIL 2013

Analysed  Modulation Doped Fieled Effect Transister (MODFET) and Metal Oxide Semiconductor Modulation Doped Fieled Effect Transister ((MOS-MODFET)) using compound material silicon Germanium (SiGe)

KAMAL PRAKASH PANDEY, RAKESH KUMAR SINGH, ANIL KUMAR Associate Professor, Deptt. of ECE, SIET, Jhalwa, Allahabad, India Assistant Professor, Deptt. of ECE, SIET, Jhalwa, Allahabad, India Assistant Professor, Deptt. of ECE, SHIATS-DU, Allahabad, India  

Downloads:

How to Cite:

[1] KAMAL PRAKASH PANDEY, RAKESH KUMAR SINGH, ANIL KUMAR Associate Professor, Deptt. of ECE, SIET, Jhalwa, Allahabad, India Assistant Professor, Deptt. of ECE, SIET, Jhalwa, Allahabad, India Assistant Professor, Deptt. of ECE, SHIATS-DU, Allahabad, India  , “Analysed  Modulation Doped Fieled Effect Transister (MODFET) and Metal Oxide Semiconductor Modulation Doped Fieled Effect Transister ((MOS-MODFET)) using compound material silicon Germanium (SiGe),” International Journal of Advanced Research in Computer and Communication Engineering (IJARCCE)