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International Journal of Advanced Research in Computer and Communication Engineering A monthly Peer-reviewed & Refereed journal
ISSN Online 2278-1021ISSN Print 2319-5940Since 2012
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← Back to VOLUME 5, ISSUE 11, NOVEMBER 2016

Ultra Low Power VLSI Design used to Reduce Sub Threshold Leakage Power

Reddappa. Pudi

DOI: 10.17148/IJARCCE.2016.51154

Abstract: Leakage power plays a vital role in current CMOS technologies. As feature size shrinks leakage power also increasing. Power dissipation becomes as important consideration as performance and area for chip design in present days VLSI industry. International Technology Roadmap for Semiconductors (ITRS) forecasts that sub threshold leakage power dissipation may dominate the dynamic power dissipation. There are two types of power dissipations in CMOS technologies those are static power dissipation and Dynamic power Dissipation. This paper mainly concentrates on static power dissipation, in that mainly on leakage power. This paper reviews various low leakage power design techniques to achieve low power dissipation.



Keywords: Leakage power, power Dissipation, low power, CMOS technologies.

How to Cite:

[1] Reddappa. Pudi, “Ultra Low Power VLSI Design used to Reduce Sub Threshold Leakage Power,” International Journal of Advanced Research in Computer and Communication Engineering (IJARCCE), DOI: 10.17148/IJARCCE.2016.51154