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This work is licensed under a Creative Commons Attribution 4.0 International License.
Study of stacked high-k Gate-All-Around FET
Thatholu Hari Sai Kumar, Ellapu Yagna Varahala Rao, Jeevan Rao Batakala
DOI: 10.17148/IJARCCE.2023.12703
Abstract:
In this paper, the characteristics of Gate-All-Around Field Effect Transistor (GAA FET) with stack high-k are studied by using the Silvaco Atlas simulations. By using of high dielectric constant material in the place of gate oxide reduces the leakage current and improve the Short Channels Effects (SCEs) like Drain Induced Barrier Lowering (DIBL) and Subthreshold Swing (SS). Gate dielectric material of HfO2 along with SiO2 are used to analyze various electrical characteristics at 22nm GAA FET. The analysis included the ON current, threshold voltage, DIBL, SS, leakage current at 22nm gate length. Β Keywords: Dielectric material, subthreshold slope, DIBLπ 15 views
This work is licensed under a Creative Commons Attribution 4.0 International License.How to Cite:
[1] Thatholu Hari Sai Kumar, Ellapu Yagna Varahala Rao, Jeevan Rao Batakala, βStudy of stacked high-k Gate-All-Around FET,β International Journal of Advanced Research in Computer and Communication Engineering (IJARCCE), DOI: 10.17148/IJARCCE.2023.12703